FinFET modeling for IC simulation and design : using the BSIM-CMG standard /: using the BSIM-CMG standard. (2015)

• Record Type: Book
• Further Information: Note: Yogesh Chauhan [and seven others].
• Authors: Chauhan, Yogesh; Lu, Darsen Duane; Sriramkumar, Vanugopalan; Khandelwal, Sourabh; Duarte, Juan Pablo; Payvadosi, Navid; Niknejad, Ai; Hu, Chenming
• Contents: 1. FinFET- from Device Concept to Standard Compact Model 2. Analog/RF behavior of FinFET 3. Core Model for FinFETs 4. Channel Current and Real Device Effects 5. Leakage Current Models 6. Charge, Capacitance and Nonquasi-Static Effect 7. Parasitic Resistances and Capacitances 8. Noise 9. Junction Diode Current and Capacitance 10. Benchmark Tests for Compact Models 11. BSIM-CMG Model Parameter Extraction 12. Temperature Effects
• Publisher Details: Amsterdam : Academic Press
• Publication Date: 2015
• Extent: 1 online resource, illustrations
• Subjects: 621.381528; Metal oxide semiconductor field-effect transistors; Metal oxide semiconductor field-effect transistors -- Standards; Three-dimensional integrated circuits; Three-dimensional integrated circuits -- Standards
• Languages: English
• ISBNs: 9780124200852
• Related ISBNs: 9780124200319
• Notes: Note: Description based on CIP data; item not viewed.
• Access Rights: Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
• Access Usage: Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force.