Nanostructured energy devices : equilibrium concepts and methods /: equilibrium concepts and methods. (2014)

• Record Type: Book
• Further Information: Note: Juan Bisquert.
• Authors: Bisquert, Juan
• Contents: Introduction to Energy Devices; References; ; Electrostatic and Thermodynamic Potentials of Electrons in Materials; Electrostatic Potential; Energies of Free Electrons and Holes; Potential Energy of the Electrons in the Semiconductor; The Vacuum Level; The Fermi Level and the Work Function; The Chemical Potential of Electrons; Potential Step of a Dipole Layer or a Double Layer; Origin of Surface Dipoles; The Volta Potential; Equalization of Fermi Levels of Two Electronic Conductors in Contact; Equilibration of Metal Junctions and the Contact Potential Difference; Equilibrium across the Semiconductor Junction; General References; References; ; Voltage, Capacitors, and Batteries; The Voltage in the Device; Anode and Cathode; Applied Voltage and Potential Difference; The Capacitor; Measurement of the Capacitance; Energy Storage in the Capacitor; Electrochemical Systems: Structure of the Metal/Solution Interface; Electrode Potential and Reference Electrodes; Redox Potential in Electrochemical Cells; Electrochemical and Physical Scales of Electron Energy in Material Systems; Changes of Electrolyte Levels with pH; Principles of Electrochemical Batteries; Capacity and Energy Content; Practical Electrochemical Batteries; Li–Ion Battery; General references; References; ; Work Functions and Injection Barriers; Injection to Vacuum in Thermionic Emission; Richardson—Dushman Equation; Kelvin Probe Method; Photoelectron Emission Spectroscopy; Injection Barriers; Pinning of the Fermi Level and Charge Neutrality Level; General References; References; ; Thermal Distribution of Electrons, Holes, and Ions in Solids; Equilibration of the Electrochemical Potential of Electrons; Configurational Entropy of Weakly Interacting Particles; Equilibrium Occupancy of Conduction Band and Valence Band States; Equilibrium Fermi Level and the Carrier Number in Semiconductors; Transparent Conducting Oxides; Hot Electrons; Screening; The Rectifier at Forward and Reverse Voltage; Semiconductor Devices as Thermal Machines that Realize Useful Work; Cell Potential in the Lithium Ion Battery; Insertion of Ions: The Lattice Gas Model; General References; References; ; Interfacial Kinetics and Hopping Transitions; Detailed Balance Principle; Form of the Transition Rates; Kinetics of Localized States: Shockley–Read–Hall Recombination Model; Reorganization Effects in Charge Transfer: the Marcus Model; Polaron Hopping; Rate of Electrode Reaction: Butler–Volmer Equation; Electron Transfer at Metal–Semiconductor Contact; Electron Transfer at Semiconductor/Electrolyte Interface; General References; References; ; The Chemical Capacitance; Carrier Accumulation and Energy Storage in the Chemical Capacitance; Localized Electronic States in Disordered Materials and Surface States; Chemical Capacitance of a Single State; Chemical Capacitance of a Broad DOS; Filling a DOS with Carriers—The Voltage and the Conductivity; Chemical Capacitance of Li Intercalation Materials; Chemical Capacitance of Graphene; General References; References; ; The Density of States in Disordered Inorganic and Organic Conductors; Capacitive and Reactive Current in Cyclic Voltammetry; Kinetic Effects in CV Response; The Exponential DOS in Amorphous Semiconductors; The Exponential DOS in Nanocrystalline Metal Oxides; Basic Properties of Organic Layers; The Gaussian DOS; General References; References; ; Planar and Nanostructured Semiconductor Junctions; Structure of the Schottky Barrier at a Metal/Semiconductor Contact; Changes of the Schottky Barrier by the Applied Voltage; Properties of the Planar Depletion Layer; Mott–Schottky Plots; Capacitance Response of Defect Levels and Surface States; Semiconductor Electrodes and the Flatb and Potential; Changes of Redox Level and Band Unpinning; Inversion and Accumulation Layer; Heterojunctions; Effect of Voltage on Highly Doped Nanocrystalline Semiconductors; Homogeneous Carrier Accumulation in Low-Doped Nanocrystalline Semiconductors; General References; References; Appendix; Index;
• Edition: 1st
• Publisher Details: Boca Raton : CRC Press
• Publication Date: 2014
• Extent: 1 online resource, illustrations
• Subjects: 621.3028; Electrical engineering -- Equipment and supplies; Nanotechnology
• Languages: English
• ISBNs: 9781439836033
• Notes: Note: Description based on CIP data; resource not viewed.
• Access Rights: Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
• Access Usage: Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force.