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Subject silicon -- doping -- XAFS -- epitaxy

1. Dopant activation mechanism of Bi wire-δ-doping into Si crystal, investigated with wavelength dispersive fluorescence x-ray absorption fine structure and density functional theory. (15th March 2017)

Authors:
Murata, Koichi; Kirkham, Christopher; Shimomura, Masaru; Nitta, Kiyofumi; Uruga, Tomoya; Terada, Yasuko; Nittoh, Koh-ichi; Bowler, David R; Miki, Kazushi
Journal:
Journal of physics
Issue:
Volume 29:Number 15(2017)
Page Start:
Record Type:
Journal Article
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