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Subject quantum-dot laser -- thin Ge buffer layer -- molecular beam epitaxy

1. All-MBE grown InAs/GaAs quantum dot lasers with thin Ge buffer layer on Si substrates. (22nd October 2020)

Authors:
Yang, Junjie; Liu, Zizhuo; Jurczak, Pamela; Tang, Mingchu; Li, Keshuang; Pan, Shujie; Sanchez, Ana; Beanland, Richard; Zhang, Jin-Chuan; Wang, Huan; Liu, Fengqi; Li, Zhibo; Shutts, Samuel; Smowton, Peter; Chen, Siming; Seeds, Alwyn; Liu, Huiyun
Journal:
Journal of physics
Issue:
Volume 54:Number 3(2021)
Page Start:
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

2. All-MBE grown InAs/GaAs quantum dot lasers with thin Ge buffer layer on Si substrates. (22nd October 2020)

Authors:
Yang, Junjie; Liu, Zizhuo; Jurczak, Pamela; Tang, Mingchu; Li, Keshuang; Pan, Shujie; Sanchez, Ana; Beanland, Richard; Zhang, Jin-Chuan; Wang, Huan; Liu, Fengqi; Li, Zhibo; Shutts, Samuel; Smowton, Peter; Chen, Siming; Seeds, Alwyn; Liu, Huiyun
Journal:
Journal of physics
Issue:
Volume 54:Number 3(2021)
Page Start:
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

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