1. Gate-tunable plasticity in artificial synaptic devices based on four-terminal amorphous gallium oxide memristors. (1st January 2023) Authors: Ikeuchi, Taishi; Hayashi, Yusuke; Tohei, Tetsuya; Sakai, Akira Journal: Applied physics express Issue: Volume 16:Number 1(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗