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Subject hydride vapor phase epitaxy -- semipolar GaN -- substrates -- SiO2 mask

1. Fabrication of freestanding {20$ \bar 2 $1} GaN substrates by HVPE using SiO2 masked GaN templates. Issue 3 (20th February 2014)

Authors:
Yamane, Keisuke; Hashimoto, Yasuhiro; Furuya, Hiroshi; Inagaki, Takashi; Okada, Narihito; Tadatomo, Kazuyuki
Other Names:
Eddy, Jr. Charles R. "Chip" sponsoringEditor.; Kuball Martin sponsoringEditor.; Koleske Daniel D. sponsoringEditor.; Amano Hiroshi sponsoringEditor.
Journal:
Physica status solidi
Issue:
Volume 11:Issue 3/4(2014:Apr.)
Page Start:
401
Record Type:
Journal Article
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