1. Effect of field oxide structure on endurance characteristics of NAND flash memory. Issue 10 (1st May 2014) Authors: Kim, Kiyong; Yoon, Joongho; Kim, Yungsam; Kim, Hongsig; Lee, Haebum; Cho, Insoo; Kim, Sangsoo; Choi, Byoungdeog Journal: Electronics letters Issue: Volume 50:Issue 10(2014) Page Start: 739 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗