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Subject epitaxy -- III/V semiconductor -- Nucleation

1. Nucleation Behavior of III/V Crystal Selectively Grown Inside Nano-Scale Trenches: The Influence of Trench Width. (1st January 2015)

Authors:
Jiang, S.; Merckling, C.; Moussa, A.; Waldron, N.; Caymax, M.; Vandervorst, W.; Collaert, N.; Barla, K.; Langer, R.; Thean, A.; Seefeldt, M.; Heyns, M.
Journal:
ECS journal of solid state science and technology
Issue:
Volume 4:Number 7(2015)
Page Start:
N83
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

2. Nucleation Behavior of III/V Crystal Selectively Grown Inside Nano-Scale Trenches: The Influence of Trench Width. (22nd May 2015)

Authors:
Jiang, S.; Merckling, C.; Moussa, A.; Waldron, N.; Caymax, M.; Vandervorst, W.; Collaert, N.; Barla, K.; Langer, R.; Thean, A.; Seefeldt, M.; Heyns, M.
Journal:
ECS journal of solid state science and technology
Issue:
Volume 4:Number 7(2015)
Page Start:
N83
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

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