1. Electrical Properties of Bottom Gate Poly-Si TFTs by NiSi2 Seed-Induced Lateral Crystallization and Its Applications. Issue 50 (14th July 2016) Authors: Lee, Sol Kyu; Seok, Ki Hwan; Kiaee, Zohreh; Kim, Hyung Yoon; Chae, Hee Jae; Lee, Yong Hee; Jang, Gil Su; Joo, Seung Ki Journal: MRS advances Issue: Volume 1:Issue 50(2016) Page Start: 3429 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗