1. Comparison of channel mobility and oxide properties of MOSFET devices on Si-face (0001) and A-face (11-20) 4H-SiC. Issue 1693 (4th June 2014) Authors: Lichtenwalner, Daniel J.; Cheng, Lin; Allen, Scott; Palmour, John W.; Lelis, Aivars; Scozzie, Charles Journal: MRS proceedings Issue: Issue 1693:(2014) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗