1. Charge-trapping memory based on tri-layer alumina gate stack and InGaZnO channel. (9th April 2020) Authors: Ma, Pengfei; Gao, Jiacheng; Guo, Wenhao; Zhang, Guanqun; Wang, Yiming; Xin, Qian; Li, Yuxiang; Song, Aimin Journal: Semiconductor science and technology Issue: Volume 35:Number 5(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗