1. Bulk-fin field-effect transistor-based capacitorless dynamic random-access memory and its immunity to the work-function variation effect. (10th January 2023) Authors: Lee, Sang Ho; Park, Jin; Kim, Geon Uk; Kang, Ga Eon; Heo, Jun Hyeok; Jeon, So Ra; Yoon, Young Jun; Seo, Jae Hwa; Jang, Jaewon; Bae, Jin-Hyuk; Lee, Sin-Hyung; Kang, In Man Journal: Japanese journal of applied physics Issue: Volume 62:Number SC(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗