1. Study of single event transient induced by heavy‐ion in NMOS transistor and CMOS inverter. (24th October 2018) Authors: Gao, Cheng; Zhang, Rui; Huang, Jiaoying; Fu, Chengcheng Other Names: Sundhararajan guestEditor.; Bhuiyan Md Zakirul Alam guestEditor.; Li Xiong guestEditor.; Rawal Bharat S. guestEditor. Journal: Concurrency and computation Issue: Volume 31:Number 12(2019) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗