1. Coupling Topological Insulator SnSb2Te4 Nanodots with Highly Doped Graphene for High‐Rate Energy Storage. Issue 2 (28th November 2019) Authors: Wu, Zhibin; Liang, Gemeng; Pang, Wei Kong; Zhou, Tengfei; Cheng, Zhenxiang; Zhang, Wenchao; Liu, Ye; Johannessen, Bernt; Guo, Zaiping Journal: Advanced materials Issue: Volume 32:Issue 2(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗