1. Top-gate transistors fabricated on epitaxially grown molybdenum disulfide and graphene hetero-structures. (12th November 2021) Authors: Tsai, Po-Cheng; Huang, Hon-Chin; Chiang, Chen-Tu; Wu, Chao-Hsin; Lin, Shih-Yen Journal: Applied physics express Issue: Volume 14:Number 12(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗