1. Investigation on the degradation indicators of short-circuit tests in 1.2 kV SiC MOSFET power modules. (September 2018) Authors: Du, H.; Reigosa, P.D.; Iannuzzo, F.; Ceccarelli, L. Journal: Microelectronics and reliability Issue: Volume 88/90(2018) Page Start: 661 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗