1. Cryogenic-temperature investigation of negative bias stress inducing threshold voltage instabilities on 4H-SiC MOSFETs. (November 2022) Authors: Masin, F.; De Santi, C.; Lettens, J.; Geenen, F.; Meneghesso, G.; Zanoni, E.; Moens, P.; Meneghini, M. Journal: Microelectronics and reliability Issue: Volume 138(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗