1. Compliance current dominates evolution of NiSi2 defect size in Ni/dielectric/Si RRAM devices. (June 2016) Authors: Mei, Sen; Bosman, Michel; Nagarajan, Raghavan; Wu, Xing; Pey, Kin Leong Journal: Microelectronics and reliability Issue: Volume 61(2016) Page Start: 71 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗