1. Control of carbon content in amorphous GeTe films deposited by plasma enhanced chemical vapor deposition (PE-MOCVD) for phase-change random access memory applications. (3rd June 2015) Authors: Aoukar, M; Szkutnik, P D; Jourde, D; Pelissier, B; Michallon, P; Noé, P; Vallée, C Journal: Journal of physics Issue: Volume 48:Number 26(2015) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗