1. A gate-width scalable 90-nm MOSFET nonlinear model including DC/RF dispersion effects valid up to 50 GHz. (September 2017) Authors: Yu, Panpan; Ling, Sun; Tian, Xuenong; Cheng, Jiali; Gao, Jianjun Journal: Solid-state electronics Issue: Volume 135(2017) Page Start: 53 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗