1. Defect blocking via laterally induced growth of semipolar (1 0 1̅ 1) GaN on patterned substrates. (1st November 2016) Authors: Khoury, Michel; Vennéguès, Philippe; Leroux, Mathieu; Delaye, Vincent; Feuillet, Guy; Zúñiga-Pérez, Jesus Journal: Journal of physics Issue: Volume 49:Number 47(2016) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗