1. Composition uniformity and large degree of strain relaxation in MBE-grown thick GeSn epitaxial layers, containing 16% Sn. (18th February 2021) Authors: Rathore, Jaswant; Nanwani, Alisha; Mukherjee, Samik; Das, Sudipta; Moutanabbir, Oussama; Mahapatra, Suddhasatta Journal: Journal of physics Issue: Volume 54:Number 18(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗