1. Low-temperature internal quantum efficiency of GaInN/GaN quantum wells under steady-state conditions. (31st January 2022) Authors: Sidikejiang, Shawutijiang; Henning, Philipp; Horenburg, Philipp; Bremers, Heiko; Rossow, Uwe; Menzel, Dirk; Hangleiter, Andreas Journal: Semiconductor science and technology Issue: Volume 37:Number 3(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗