Subject: InN -- buffer layer -- RF-MOMBE. - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Subject InN -- buffer layer -- RF-MOMBE.

1. Growth and characteristic of high orientation indium nitride films grown on (100) silicon substrate. (1st January 2014)

Authors:: Chen, Wei-Chun; Chen, Hung-Pin; Kuo, Shou-Yi; Lin, Woei-Tyng; Lai, Fang-I; Hsiao, Chien-Nan; Lee, Cheng-Chung
Journal:: International journal of nanotechnology
Issue:: Volume 11:Number 12(2014)
Page Start:: 1063
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

2. Growth and characteristic of high orientation indium nitride films grown on (100) silicon substrate. (2014)

Authors:: Chen, Wei-Chun; Chen, Hung-Pin; Kuo, Shou-Yi; Lin, Woei-Tyng; Lai, Fang-I; Hsiao, Chien-Nan; Lee, Cheng-Chung
Journal:: International journal of nanotechnology
Issue:: Volume 11:Number 12(2014)
Page Start:: 1063
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗