Search

Subject InGaN -- GaN -- doping -- LED

1. InGaN doping for high carrier concentration in plasma‐assisted molecular beam epitaxy. Issue 3 (28th January 2014)

Authors:
Gherasoiu, Iulian; Yu, Kin Man; Reichertz, Lothar A.; Walukiewicz, Wladek
Other Names:
Eddy, Jr. Charles R. "Chip" sponsoringEditor.; Kuball Martin sponsoringEditor.; Koleske Daniel D. sponsoringEditor.; Amano Hiroshi sponsoringEditor.
Journal:
Physica status solidi
Issue:
Volume 11:Issue 3/4(2014:Apr.)
Page Start:
381
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

Limit your search