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Subject InGaN/GaN multiple quantum well -- Localization effect -- Growth rate

1. Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells. (September 2016)

Authors:
Li, X.; Zhao, D.G.; Yang, J.; Jiang, D.S.; Liu, Z.S.; Chen, P.; Zhu, J.J.; Liu, W.; He, X.G.; Li, X.J.; Liang, F.; Zhang, L.Q.; Liu, J.P.; Yang, H.; Zhang, Y.T.; Du, G.T.
Journal:
Superlattices and microstructures
Issue:
Volume 97(2016)
Page Start:
186
Record Type:
Journal Article
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