1. A simulation study on memory characteristics of InGaZnO-channel ferroelectric FETs with 2D planar and 3D structures. (1st May 2022) Authors: Mo, Fei; Mei, Xiaoran; Saraya, Takuya; Hiramoto, Toshiro; Kobayashi, Masaharu Journal: Japanese journal of applied physics Issue: Volume 61:Number SC(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗