1. Lateral variation doped wide bottom trench gate IGBT for reduced on-resistance with improved gate charge. (2021) Authors: Vaidya, Mahesh; Naugarhiya, Alok; Verma, Shrish Journal: Materials today Issue: Volume 46:Part 10(2021) Page Start: 4587 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗