1. An SEM/STM based nanoprobing and TEM study of breakdown locations in HfO2/SiOx dielectric stacks for failure analysis. Issue 9 (August 2015) Authors: Shubhakar, K.; Bosman, M.; Neucheva, O.A.; Loke, Y.C.; Raghavan, N.; Thamankar, R.; Ranjan, A.; O'Shea, S.J.; Pey, K.L. Journal: Microelectronics and reliability Issue: Volume 55:Issue 9/10(2015) Page Start: 1450 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗