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Subject GaN -- Schottky barrier diode -- Integration

1. Demonstration of Schottky barrier diode integrated in 200 V power p-GaN HEMTs technology with robust stability. (July 2022)

Authors:
Gallardo, Jethro Oroceo; Dash, Sachidananda; Tran, Thanh Nga; Huang, Zhen-Hong; Tang, Shun-Wei; Wellekens, Dirk; Bakeroot, Benoit; Syshchyk, Olga; De Jaeger, Brice; Decoutere, Stefaan; Wu, Tian-Li
Journal:
Microelectronics and reliability
Issue:
Volume 134(2022)
Page Start:
Record Type:
Journal Article
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