1. A novel methodology to characterize LGA packaged GaN power transistors using a mother/daughter board configuration for the reliability qualification in the mild hybrid applications. (November 2022) Authors: Douzi, Chawki; Kadi, Moncef; Dherbecourt, Pascal; Besserour, Mohamed Akram; Joubert, Eric; Fouquet, François Journal: Microelectronics and reliability Issue: Volume 138(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗