Subject: GaN -- HEMTs -- InAlN - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Subject GaN -- HEMTs -- InAlN

1. Trapping Phenomena in InAlN/GaN High Electron Mobility Transistors. (13th January 2018)

Authors:: Polyakov, A. Y.; Smirnov, N. B.; Shchemerov, I. V.; Yang, Jiancheng; Ren, Fan; Lo, Chien-Fong; Laboutin, Oleg; Johnson, J. W.; Pearton, S. J.
Journal:: ECS journal of solid state science and technology
Issue:: Volume 7:Number 2(2018)
Page Start:: Q1
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

2. Trapping Phenomena in InAlN/GaN High Electron Mobility Transistors. (1st January 2018)

Authors:: Polyakov, A. Y.; Smirnov, N. B.; Shchemerov, I. V.; Yang, Jiancheng; Ren, Fan; Lo, Chien-Fong; Laboutin, Oleg; Johnson, J. W.; Pearton, S. J.
Journal:: ECS journal of solid state science and technology
Issue:: Volume 7:Number 2(2018)
Page Start:: Q1
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗