Subject: GaN/AlGaN -- HEMT -- Scaling - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Subject GaN/AlGaN -- HEMT -- Scaling

1. Source extension region scaling for AlGaN/GaN high electron mobility transistors using non-alloyed ohmic contacts. (August 2016)

Authors:: Takhar, Kuldeep; Akhil Kumar, S; Meer, Mudassar; Upadhyay, Bhanu B.; Upadhyay, Pankaj; Khachariya, Dolar; Ganguly, Swaroop; Saha, Dipankar
Journal:: Solid-state electronics
Issue:: Volume 122(2016)
Page Start:: 70
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

2. Source extension region scaling for AlGaN/GaN high electron mobility transistors using non-alloyed ohmic contacts. (August 2016)

Authors:: Takhar, Kuldeep; Akhil Kumar, S; Meer, Mudassar; Upadhyay, Bhanu B.; Upadhyay, Pankaj; Khachariya, Dolar; Ganguly, Swaroop; Saha, Dipankar
Journal:: Solid-state electronics
Issue:: Volume 122(2016)
Page Start:: 70
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗