1. Effects of X-ray accelerating voltage on electrical properties and reliability for ferroelectric random-access memory (FeRAM). (1st March 2022) Authors: Lin, Hsin-Ni; Chang, Ting-Chang; Chen, Wen-Chung; Tan, Yung-Fang; Chang, Kai-Chun; Lin, Shih-Kai; Yeh, Yu-Hsuan; Wu, Chung-Wei; Zhang, Yong-Ci; Yeh, Chien-Hung; Lee, Ya-Huan; Huang, Jen-Wei Journal: Applied physics express Issue: Volume 15:Number 3(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗