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Subject Electron Devices -- gallium oxide -- rectifier -- semiconductor

1. Switching Behavior and Forward Bias Degradation of 700V, 0.2A, β-Ga2O3 Vertical Geometry Rectifiers. (1st January 2019)

Authors:
Yang, Jiancheng; Fares, Chaker; Ren, Fan; Chen, Yen-Ting; Liao, Yu-Te; Chang, Chin-Wei; Lin, Jenshan; Tadjer, Marko; Smith, David J.; Pearton, S. J.; Kuramata, Akito
Journal:
ECS journal of solid state science and technology
Issue:
Volume 8:Number 7(2019)
Page Start:
Q3028
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

2. Switching Behavior and Forward Bias Degradation of 700V, 0.2A, β-Ga2O3 Vertical Geometry Rectifiers. (30th January 2019)

Authors:
Yang, Jiancheng; Fares, Chaker; Ren, Fan; Chen, Yen-Ting; Liao, Yu-Te; Chang, Chin-Wei; Lin, Jenshan; Tadjer, Marko; Smith, David J.; Pearton, S. J.; Kuramata, Akito
Journal:
ECS journal of solid state science and technology
Issue:
Volume 8:Number 7(2019)
Page Start:
Q3028
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

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