1. 3D simulation of single-event-transient effects in symmetrical dual-material double-gate MOSFETs. Issue 9 (August 2015) Authors: Munteanu, D.; Autran, J.L. Journal: Microelectronics and reliability Issue: Volume 55:Issue 9/10(2015) Page Start: 1522 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗