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Subject DRAM periphery transistors -- High mobility channels -- MOSFET

1. Strained c:Si0.55Ge0.45 with embedded e:Si0.75Ge0.25 S/D IFQW SiGe-pFET for DRAM periphery applications. (February 2016)

Authors:
Ritzenthaler, R.; Schram, T.; Witters, L.; Mitard, J.; Spessot, A.; Caillat, C.; Hellings, G.; Eneman, G.; Aoulaiche, M.; Na, H.-J.; Son, Y.; Noh, K.B.; Fazan, P.; Lee, S.-G.; Collaert, N.; Mocuta, A.; Horiguchi, N.; Thean, A.V.-Y.
Journal:
Materials science in semiconductor processing
Issue:
Volume 42:Part 2(2016:Feb.)
Page Start:
255
Record Type:
Journal Article
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