1. Accelerated aging for gate oxide of SiC MOSFETs under continuous switching conditions by applying advanced HTGB test. (November 2021) Authors: Hayashi, Shin-Ichiro; Wada, Keiji Journal: Microelectronics and reliability Issue: Volume 126(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗