1. Arsenic atomic layer doping in Si using AsH3. (August 2015) Authors: Yamamoto, Yuji; Kurps, Rainer; Murota, Junichi; Tillack, Bernd Journal: Solid-state electronics Issue: Volume 110(2015) Page Start: 29 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗