1. Full capacitance model, considering the specifics of amorphous oxide semiconductor thin film transistors structures. (June 2019) Authors: Cerdeira, A.; Estrada, M.; Hernandez-Barrios, Y.; Hernandez, I.; Iñiguez, B. Journal: Solid-state electronics Issue: Volume 156(2019) Page Start: 16 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗