1. Atomically Controlled Processing for Dopant Segregation in CVD Si and Ge Epitaxial Growth. (1st January 2018) Authors: Murota, Junichi; Yamamoto, Yuji; Costina, Ioan; Tillack, Bernd; Thanh, Vinh Le; Loo, Roger; Caymax, Matty Journal: ECS journal of solid state science and technology Issue: Volume 7:Number 6(2018) Page Start: P305 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Atomically Controlled Processing for Dopant Segregation in CVD Si and Ge Epitaxial Growth. (31st May 2018) Authors: Murota, Junichi; Yamamoto, Yuji; Costina, Ioan; Tillack, Bernd; Thanh, Vinh Le; Loo, Roger; Caymax, Matty Journal: ECS journal of solid state science and technology Issue: Volume 7:Number 6(2018) Page Start: P305 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗