1. Threshold voltage control with high-temperature gate-oxide annealing in ultrawide bandgap AlGaN-channel MOSHFETs. (1st October 2022) Authors: Mollah, Shahab; Hussain, Kamal; Mamun, Abdullah; Alam, Md Didarul; Chandrashekhar, MVS; Simin, Grigory; Khan, Asif Journal: Applied physics express Issue: Volume 15:Number 10(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗