1. Influence of AlxGa1−xN nucleation layers on MOVPE-grown zincblende GaN epilayers on 3C-SiC/Si(001). (28th April 2022) Authors: Gundimeda, Abhiram; Rostami, Mohammadreza; Frentrup, Martin; Hinz, Alexander; Kappers, Menno J; Wallis, David J; Oliver, Rachel A Journal: Journal of physics Issue: Volume 55:Number 17(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Influence of AlxGa1−xN nucleation layers on MOVPE-grown zincblende GaN epilayers on 3C-SiC/Si(001). (2nd February 2022) Authors: Gundimeda, Abhiram; Rostami, Mohammadreza; Frentrup, Martin; Hinz, Alexander; Kappers, Menno J; Wallis, David J; Oliver, Rachel A Journal: Journal of physics Issue: Volume 55:Number 17(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗