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Subject AlGaN/GaN -- MIS-HEMT -- Slow traps -- Reliability

1. Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics. (January 2015)

Authors:
Wu, Tian-Li; Marcon, Denis; Ronchi, Nicolo; Bakeroot, Benoit; You, Shuzhen; Stoffels, Steve; Van Hove, Marleen; Bisi, Davide; Meneghini, Matteo; Groeseneken, Guido; Decoutere, Stefaan
Journal:
Solid-state electronics
Issue:
Volume 103(2015)
Page Start:
127
Record Type:
Journal Article
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