1. Effects of gate work function on E-mode AlGaN/GaN HEMTs with stack gate β-Ga2O3/p-GaN structure. (22nd June 2021) Authors: Ge, Mei; Li, Yi; Zhu, Youhua; Chen, Dunjun; Wang, Zhiliang; Tan, Shuxin Journal: Journal of physics Issue: Volume 54:Number 35(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗