1. An amorphous SiO2/4H-SiC(0001) interface: Band offsets and accurate charge transition levels of typical defects. (March 2015) Authors: Li, Wenbo; Zhao, Jijun; Wang, Dejun Journal: Solid state communications Issue: Volume 205(2015) Page Start: 28 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗