1. Extraction of physical Schottky parameters using the Lambert function in Ni/AlGaN/GaN HEMT devices with defined conduction phenomena *Project supported by the French Department of Defense (DGA). (January 2017) Authors: Latry, O.; Divay, A.; Fadil, D.; Dherbécourt, P. Journal: Journal of semiconductors Issue: Volume 38:Number 1(2017:Jan.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. High current gain 4H-SiC bipolar junction transistor*Project supported by the National Natural Science Foundation of China (Nos. 61306093, 61401075). (April 2016) Authors: Zhang 张, Yourun 有润; Shi 施, Jinfei 金飞; Liu 刘, Ying 影; Sun 孙, Chengchun 成春; Guo 郭, Fei 飞; Zhang 张, Bo 波 Journal: Journal of semiconductors Issue: Volume 37:Number 4(2016:Apr.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Large signal and noise properties of heterojunction AlxGa1−xAs/GaAs DDR IMPATTs. (June 2016) Authors: Banerjee, Suranjana; Mitra, Monojit Journal: Journal of semiconductors Issue: Volume 37:Number 6(2016:Jun.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗