1. 1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor *Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0400100), the National Natural Science Foundation of China (Grant Nos. 11435010, 61474086, and 61804125), and the Natural Science Basic Research Program of Shaanxi Province, China (Grant No. 2016ZDJC-02). (February 2019) Authors: Zhao 赵, Sheng-Lei 胜雷; Wang 王, Zhi-Zhe 之哲; Chen 陈, Da-Zheng 大正; Wang 王, Mao-Jun 茂俊; Dai 戴, Yang 扬; Ma 马, Xiao-Hua 晓华; Zhang 张, Jin-Cheng 进成; Hao 郝, Yue 跃 Journal: Chinese physics B Issue: Volume 28:Number 2(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor*Project supported by the National Natural Science Foundation of China (Grant Nos. 61334002, 61106106, and 61204085). (20th December 2015) Authors: Luo 罗, Jun 俊; Zhao 赵, Sheng-Lei 胜雷; Mi 宓, Min-Han 珉瀚; Chen 陈, Wei-Wei 伟伟; Hou 侯, Bin 斌; Zhang 张, Jin-Cheng 进成; Ma 马, Xiao-Hua 晓华; Hao 郝, Yue 跃 Journal: Chinese physics B Issue: Volume 25:Number 2(2016) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Enhancement of Breakdown Voltage in AlGaN/GaN High Electron Mobility Transistors Using Double Buried p-Type Layers*Supported by the National Natural Science Foundation of China under Grant Nos 61334002, 61106106, and 61204085, and the China Postdoctoral Science Foundation Funded Project under Grant No 2015M582610. (June 2016) Authors: Luo 罗, Jun 俊; Zhao 赵, Sheng-Lei 胜雷; Lin 林, Zhi-Yu 志宇; Zhang 张, Jin-Cheng 进成; Ma 马, Xiao-Hua 晓华; Hao 郝, Yue 跃 Journal: Chinese physics letters Issue: Volume 33:Number 6(2016:Jun.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Investigation on threshold voltage of p-channel GaN MOSFETs based on p-GaN/AlGaN/GaN heterostructure*Project supported by the Key-Area Research and Development Program of Guangdong Province, China (Grant Nos. 2020B010174001 and 2020B010171002), the Ningbo Science and Technology Innovation Program 2025 (Grant No. 2019B10123), and the National Natural Science Foundation of China (Grant No. 62074122). (August 2021) Authors: Li 李, Ruo-Han 若晗; Fei 费, Wu-Xiong 武雄; Tang 唐, Rui 锐; Wu 吴, Zhao-Xi 照玺; Duan 段, Chao 超; Zhang 张, Tao 涛; Zhu 朱, Dan 丹; Zhang 张, Wei-Hang 苇杭; Zhao 赵, Sheng-Lei 胜雷; Zhang 张, Jin-Cheng 进成; Hao 郝, Yue 跃 Journal: Chinese physics B Issue: Volume 30:Number 8(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Transport mechanism of reverse surface leakage current in AlGaN/GaN high-electron mobility transistor with SiN passivation*Project supported by the National Natural Science Foundation of China (Grant Nos. 61334002, 61106106, and 61474091), the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory, China (Grant No. ZHD201206), the New Experiment Development Funds for Xidian University, China (Grant No. SY1213), the 111 Project, China (Grant No. B12026), the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry, China, and the Fundamental Research Funds for the Central Universities, China (Grant No. K5051325002). (February 2015) Authors: Zheng 郑, Xue-Feng 雪峰; Fan 范, Shuang 爽; Chen 陈, Yong-He 永和; Kang 康, Di 迪; Zhang 张, Jian-Kun 建坤; Wang 王, Chong 冲; Mo 默, Jiang-Hui 江辉; Li 李, Liang 亮; Ma 马, Xiao-Hua 晓华; Zhang 张, Jin-Cheng 进成; Hao 郝, Yue 跃 Journal: Chinese physics B Issue: Volume 24:Number 2(2015:Feb.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Trap states induced by reactive ion etching in AlGaN/GaN high-electron-mobility transistors*Project supported by the National Natural Science Foundation of China (Grant Nos. 61334002 and 61106106). (12th October 2015) Authors: Luo 罗, Jun 俊; Zhao 赵, Sheng-Lei 胜雷; Mi 宓, Min-Han 珉瀚; Hou 侯, Bin 斌; Yang 杨, Xiao-Lei 晓蕾; Zhang 张, Jin-Cheng 进成; Ma 马, Xiao-Hua 晓华; Hao 郝, Yue 跃 Journal: Chinese physics B Issue: Volume 24:Number 11(2015:Nov.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗