1. Atomically thin mononitrides SiN and GeN: New two-dimensional wide band gap semiconductors. (27th June 2018) Authors: Qian, Yan; Du, Zhengwei; Zhu, Renzhu; Wu, Haiping; Kan, Erjun; Deng, Kaiming Journal: Europhysics letters Issue: Volume 122:Number 4(2018:May) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Graphene-like quaternary compound SiBCN: A new wide direct band gap semiconductor predicted by a first-principles study. (31st May 2017) Authors: Qian, Yan; Wu, Haiping; Kan, Erjun; Deng, Kaiming Journal: Europhysics letters Issue: Volume 118:Number 1(2017:Apr.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗