Subject: 537 - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Subject 537

31. 2D large beam inclination angle multibeam array antenna without beamforming network. Issue 6 (18th August 2019)

Authors:: Dou, Haipeng; Ma, Runbo; Han, Liping; Han, Guorui; Yang, Rongcao; Zhang, Wenmei
Journal:: Electromagnetics
Issue:: Volume 39:Issue 6(2019)
Page Start:: 453
Record Type:: Journal Article
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32. 2D Layered Materials for Memristive and Neuromorphic Applications. (11th December 2019)

Authors:: Wang, Chen‐Yu; Wang, Cong; Meng, Fanhao; Wang, Pengfei; Wang, Shuang; Liang, Shi‐Jun; Miao, Feng
Journal:: Advanced Electronic Materials
Issue:: Volume 6:Number 2(2020)
Page Start:: n/a
Record Type:: Journal Article
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33. 2D Materials: 2D Tin Monoxide—An Unexplored p‐Type van der Waals Semiconductor: Material Characteristics and Field Effect Transistors (Adv. Electron. Mater. 4/2016). (April 2016)

Authors:: Saji, Kachirayil J.; Tian, Kun; Snure, Michael; Tiwari, Ashutosh
Journal:: Advanced Electronic Materials
Issue:: Volume 2:Number 4(2016)
Page Start:: n/a
Record Type:: Journal Article
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34. 2D Materials: High‐Crystalline 2D Layered PbI2 with Ultrasmooth Surface: Liquid‐Phase Synthesis and Application of High‐Speed Photon Detection (Adv. Electron. Mater. 11/2016). (November 2016)

Authors:: Zheng, Wei; Zhang, Zhaojun; Lin, Richeng; Xu, Kai; He, Jun; Huang, Feng
Journal:: Advanced Electronic Materials
Issue:: Volume 2:Number 11(2016)
Page Start:: n/a
Record Type:: Journal Article
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35. 2D Material‐Based Vertical Double Heterojunction Bipolar Transistors with High Current Amplification. (27th December 2018)

Authors:: Lee, Geonyeop; Pearton, Stephen J.; Ren, Fan; Kim, Jihyun
Journal:: Advanced Electronic Materials
Issue:: Volume 5:Number 3(2019)
Page Start:: n/a
Record Type:: Journal Article
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36. 2D Mg‐Cu Intermetallic Compounds with Nontrivial Band Topology and Dirac Nodal Lines. (23rd December 2021)

Authors:: Wu, Rongting; Wu, Ze‐Bin; Božović, Ivan
Journal:: Advanced Electronic Materials
Issue:: Volume 8:Number 3(2022)
Page Start:: n/a
Record Type:: Journal Article
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37. 2D MoS2 Charge Injection Memory Transistors Utilizing Hetero‐Stack SiO2/HfO2 Dielectrics and Oxide Interface Traps. (29th March 2021)

Authors:: Widiapradja, Livia Janice; Nam, Taewook; Jeong, Yeonsu; Jin, Hye‐Jin; Lee, Yangjin; Kim, Kwanpyo; Lee, Sangyoon; Kim, Hyungjun; Bae, Heesun; Im, Seongil
Journal:: Advanced Electronic Materials
Issue:: Volume 7:Number 5(2021)
Page Start:: n/a
Record Type:: Journal Article
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38. 2D Nanovaristors at Grain Boundaries Account for Memristive Switching in Polycrystalline BiFeO3. (20th March 2015)

Authors:: Shen, Xiao; Yin, Kuibo; Puzyrev, Yevgeniy S.; Liu, Yiwei; Sun, Litao; Li, Run‐Wei; Pantelides, Sokrates T.
Journal:: Advanced Electronic Materials
Issue:: Volume 1:Number 5(2015:May)
Page Start:: n/a
Record Type:: Journal Article
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39. 2D Optoelectronics: Layer‐Dependent Optoelectronic Properties of 2D van der Waals SnS Grown by Pulsed Laser Deposition (Adv. Electron. Mater. 3/2020). (9th March 2020)

Authors:: Wang, Weihao; Zhang, Tao; Seliverstov, Aleksandr; Zhang, Huihui; Wang, Yichen; Wang, Fengzhi; Peng, Xiaoli; Lu, Qiaoqi; Qin, Chao; Pan, Xinhua; Zeng, Yu‐Jia; Van Haesendonck, Chris; Ye, Zhizhen
Journal:: Advanced Electronic Materials
Issue:: Volume 6:Number 3(2020)
Page Start:: n/a
Record Type:: Journal Article
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40. 2D Resistive Switching Based on Amorphous Zinc–Tin Oxide Schottky Diodes. (16th December 2019)

Authors:: Casa Branca, Nuno; Deuermeier, Jonas; Martins, Jorge; Carlos, Emanuel; Pereira, Maria; Martins, Rodrigo; Fortunato, Elvira; Kiazadeh, Asal
Journal:: Advanced Electronic Materials
Issue:: Volume 6:Number 2(2020)
Page Start:: n/a
Record Type:: Journal Article
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